Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW• Broadband Frequency Range: 66-88MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V̶...
RA07M0608M: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW̶...
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Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>7W...
SYMBOL |
PARAMETER |
CONDITIONS |
RATING |
UNIT |
VDD |
Drain Voltage | VGG=0V, Pin=0W |
12 |
V |
VDD |
Drain Voltage |
VGG<5V |
9.2 |
V |
VGG |
Gate Voltage | VDD<7.2V, Pin=0W |
5.5 |
V |
Pin |
Input Power | f=806-870MHz, ZG=ZL=50 |
50 |
mW |
Pout |
Output Power |
10 |
W | |
Tcase(OP) |
Operation Case Temperature Range |
-30 to +90 |
°C | |
Tstg |
Storage Temperature Range |
-40 to +110 |
°C |
The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA07M0608M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module RA07M0608M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.