RA07M0608M

Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW• Broadband Frequency Range: 66-88MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V̶...

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SeekIC No. : 004469606 Detail

RA07M0608M: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW̶...

floor Price/Ceiling Price

Part Number:
RA07M0608M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=5V, Pin=30mW
• T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=30mW
• Broadband Frequency Range: 66-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power





Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage VGG=0V, Pin=0W
12
V
VDD
Drain Voltage
VGG<5V
9.2
V
VGG
Gate Voltage VDD<7.2V, Pin=0W
5.5
V
Pin
Input Power f=806-870MHz,
ZG=ZL=50
50
mW
Pout
Output Power
10
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.




Description

The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to 88-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA07M0608M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module RA07M0608M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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