RA07M2127M-01

The RA07M2127M-01 is one member of the RA07M2127M family which is designed as the 7-watt RF MOSFET amplifier module device that can be used in non-linear FM modulation and linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power applications.

Features of the RA07M2127M-01 are:(1)Enhancement-Mode MOSFET Transistors (IDD@0 @ VDD=7.2V, VGG=0V); (2)Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=20mW; (3)hT>45% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=20mW; (4)Broadband Frequency Range: 215-270MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 x 10 x 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

The absolute maximum ratings of the RA07M2127M-01 can be summarized as:(1)Drain Voltage: 9.2 V;(2)Gate Voltage: 4 V;(3)Input Power: 30 mW;(4)Output Power: 10 W;(5)Operation Case Temperature Range: -30 to +90 °C;(6)Storage Temperature Range: -40 to +110 °C.

The electrical characteristics of RA07M2127M-01 can be summarized as:(1)Frequency Range: 215 to 270 MHz;(2)Output Power: 7 W;(3)Total Efficiency: 45 %;(4)Input VSWR: 4:1;(5)Gate Current: 1 mA;(6)Stability: No parasitic oscillation;(7)Load VSWR Tolerance: No degradation or destroy. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .