RA07M3340M

Enhancement-Mode MOSFET Transistors (I_DD0 @ V_DD=7.2V, V_GG=0V)
• P_out>7W @ V_DD=7.2V, V_GG=3.5V, P_in=50mW
• >40% @ P_out=6.5W (V_GG control), V_DD=7.2V, P_in=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=OV), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum).At VGG=3.5V, the typical gate current is 1 mA.

Features of the RA07M3340M are:(1)broadband frequency range: 330-400MHz; (2)low-power control current IGG=1 mA (typ) at VGG=3.5V; (3)module size: 30 x 10 x 5.4 mm; (4)linear operation is possible by setting the quiescent drain current; (5)with the gate voltage and controlling the output power with the input power.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

The absolute maximum ratings of the RA07M3340M can be summarized as:(1)drain voltage:9.2V;(2)storage temperature range:-40 to +110;(3)operating case temperature range:-30 to +90 ;(4)gate voltage:4V;(5)input power:70mW;(6)output power:10W.This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.