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RA07M3843M

Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW• T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW• Broadband Frequency Range: 378-430MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3...

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SeekIC No. : 004469612 Detail

RA07M3843M: Features: • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW• T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW&...

RA07M3843M Data Sheet

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Part Number:
RA07M3843M
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW
• Broadband Frequency Range: 378-430MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
 Drain Voltage VGG=0V, Pin=0W
12
V
VDD
Drain Voltage
VGG<5V
9.2
V
VGG
 Gate Voltage VDD<7.2V, Pin=0W
4
V
IDD
 Total Current
3.5
A
Pin
 Input Power f=806-870MHz,
ZG=ZL=50
70
mW
Pout
 Output Power
10
W
Tcase(OP)
 Operation Case Temperature Range
-30 to +90
°C
Tstg
 Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed




Description

The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to 430-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module RA07M3843M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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