RA13H1317M

Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>13W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175 MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Linear oper...

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SeekIC No. : 004469631 Detail

RA13H1317M: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>13W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175 MHz• Low-Po...

floor Price/Ceiling Price

Part Number:
RA13H1317M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/12

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>13W,   Connection Diagram>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175 MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power





Specifications

SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<5V 17 V
VGG Gate Voltage VDD<12.5V, Pin=0mW 6 V
Pin Input Power f=135-175MHz,
ZG=ZL=50
100 mW
Pout Output Power 20 W
Tcase(OP) Operation Case Temperature Range -30 to +110
Tstg Storage Temperature Range -40 to +110
The above parameters are independently guaranteed.




Description

The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA13H1317M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module RA13H1317M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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