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RA30H1317M1

Features: • Enhancement-Mode MOSFET Transistors(IDD0 @ VDD=12.5V, VGG=0V)• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• Module Size: 66 x 21 x 9.88 mm• Linear opera...

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SeekIC No. : 004469666 Detail

RA30H1317M1: Features: • Enhancement-Mode MOSFET Transistors(IDD0 @ VDD=12.5V, VGG=0V)• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 135-175MHz• Low-Pow...

RA30H1317M1 Data Sheet

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Part Number:
RA30H1317M1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power




Specifications

SYMBOL
 PARAMETER CONDITIONS
RATING
UNIT
VDD
 Drain Voltage VGG<5V, ZG=ZL=50
17
V
VGG
 Gate Voltage VDD<12.5V, Pin=50mW, ZG=ZL=50
6
V
Pin
 Input Power f=135-175MHz, VGG<5V
100
mW
Pout
 Output Power
45
W
Tcase(OP)
 Operation Case Temperature Range
-30to+100
°C
Tstg
 Storage Temperature Range
-40to+110
°C





Description

The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA30H1317M1. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

This module RA30H1317M1 is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.






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