RA89

The RA89 microwave amplifier is designed as the discrete hybrid which uses thin film manufacturing processes for accurate performance and high reliability. This two stage GaAs FET feedback amplifier design displays impressive performance characteristics over a brosdband frequency range.Both TO-8B and surface mount packages are hermetically sealed and MIL-STD-883 environmental screening is available.Features of the RA89 are:(1)high gain-two stages:26.5 dB(typ.);(2)high output power:21.5 dBm(typ.);(3)high third-order IP:+35 dBm.

The absolute maximum ratings of the RA89 can be summarized as:(1)storage temperature:-62 to +125;(2)case temperature:+125;(3)DC voltage:+17 V;(4)continuous input power:+13 dBm;(5)short term input power(1 minute max.):50 mW;(6)peak power:0.5 W;(7)"S" series burn-in temperature(case): +125.

The electrical specifictions can be summarized as(25):(1)frequency:3-700 MHz;(2)small signal gain(min):26.5 dB;(3)gain flatness(max):+/-0.2 dB;(4)reverse isolation:36 dB;(5)noise figure(max):3.7 dB;(6)power output @ 1 dB comp.(min):21.5 dBm;(7)second order harmonic IP:+65 dBm;(8)DC current @ 5 volts(max):130 mA.