RB215T-40

Recovery Time :
Maximum Power Dissipation :
Mounting Style : Through Hole
Product : Schottky Diodes
Peak Reverse Voltage : 45 V
Max Surge Current : 100 A
Forward Continuous Current : 20 A
Packaging : Bulk
Configuration : Dual Common Cathode
Operating Temperature Range : + 150 C
Package / Case : TO-220FN
Forward Voltage Drop : 0.55 V at 10 A
Maximum Reverse Leakage Current : 300 uA at 40 V


Features:

1) Cathode common dual type.
    (TO-220)
2) Low IR
3) High reliability


Application

Switching power supply


Specifications

Parameter	Symbol	Limits	Unit
Reverse voltage (repetitive peak)	VRM	45	V
Reverse voltage (DC)	VR	40	V
Average rectified forward current(*1)	Io	6	A
Forward current surge peak (60Hz・1cyc)(*1)	IFSM	100	A
Junction temperature	Tj	150
Storage temperature	Tstg	-40 to +150

(*1)Tc=100max Per chip : Io/2



Parameters:

Technical/Catalog Information	RB215T-40
Vendor	Rohm Semiconductor
Category	Discrete Semiconductor Products
Diode Type	Schottky
Diode Configuration	1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max)	40V
Current - Average Rectified (Io) (per Diode)	10A
Voltage - Forward (Vf) (Max) @ If	550mV @ 10A
Current - Reverse Leakage @ Vr	500A @ 40V
Reverse Recovery Time (trr)	-
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole, Radial
Package / Case	TO-220FN-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RB215T 40 RB215T40