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RD00HVS1

Features: High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHzApplicationFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c Drain to source voltageGate to ...

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RD00HVS1: Features: High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHzApplicationFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets.Specifications SYMBOL PARAMETE...

RD00HVS1 Data Sheet

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Part Number:
RD00HVS1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz




Application

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c		 Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
-
-
-
junction to case
30
+/-10
3.1
20
200
150
-40 to +125
40
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.




Description

RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.




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