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RD01MUS1

Features: High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.ApplicationFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c Drain ...

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RD01MUS1: Features: High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.ApplicationFor output stage of high power amplifiers in VHF/UHF Band mobile radio sets.Specifications ...

RD01MUS1 Data Sheet

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Part Number:
RD01MUS1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.




Application

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c		 Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
-
-
-
junction to case
30
+/-10
3.6
60
600
150
40 to +125
34.5
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.





Description

RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.




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