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RD06HHF1

Features: •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHzApplicationFor output stage of high power amplifiers in HF band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c Drain to source voltageGate to ...

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SeekIC No. : 004475384 Detail

RD06HHF1: Features: •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHzApplicationFor output stage of high power amplifiers in HF band mobile radio sets.Specifications SYMBOL PARAMETE...

RD06HHF1 Data Sheet

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Part Number:
RD06HHF1
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz




Application

For output stage of high power amplifiers in HF band mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c		 Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
-
-
-
junction to case
50
+/- 20
27.8
0.3
3
150
40 to +150
4.5
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.




Description

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.




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