RD07MVS1

Features: ·High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz·High Efficiency: 60%typ. (175MHz)·High Efficiency: 55%typ. (520MHz)ApplicationFor output stage of high power amplifiers in VHF/UHF band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNI...

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SeekIC No. : 004475387 Detail

RD07MVS1: Features: ·High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz·High Efficiency: 60%typ. (175MHz)·High Efficiency: 55%typ. (520MHz)ApplicationFor output stage of high power amplifiers in VHF/UH...

floor Price/Ceiling Price

Part Number:
RD07MVS1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Features:

·High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
·High Efficiency: 60%typ. (175MHz)
·High Efficiency: 55%typ. (520MHz)





Application

For output stage of high power amplifiers in VHF/UHF band mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
-
-
-
junction to case
30
+/- 20
50
1.5
3
150
40 to +125
2.5
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.





Description

RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.




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