RD38F1010C0ZBL0

The RD38F1010C0ZBL0 series The C3 Stacked-CSP device combines flash and SRAM into a single package, and provides secure low-voltage memory solutions for portable applications. RD38F1010C0ZBL0 combines two memory technologies, flash memory and SRAM, in one package. The flash memory delivers enhanced security features, a block locking capability that allows instant locking/unlocking of any flash block with zero-latency, and a 128-bit protection register that enable unique device identification, to meet the needs of next generation portable applications. Improved 12 V production programming can be used to improve factory throughput.

Features of the RD38F1010C0ZBL0 are:(1)Flash&Memory&Plus&SRAM; (2)Stacked-Chip&Scale&Package&(StackedCSP)&Technology; (3)Advanced&SRAM&Technology; (4)Intel Flash&Data&Integrator&(FDI)& Software; (5)Advanced+&Boot&Block&Flash&Memory; (6)Blocking&Architectur; (7)Low&Power&Operation; (8)Flash&Technologies.

The absolute maximum ratings of the RD38F1010C0ZBL0 can be summarized as:(1)Extended &Operating &Temperature:25°C&to&+85°C; (2)Storage& Temperatur:65°C&to&+125°C; (3)Voltage &on& Any &Ball&(except&F-VCC /F-VCCQ /&S-VCC and&F-VPP)&with &Respect  &to& GND:0.5 V&to&+3.3 V; (4)F-VPP Voltage&(for& Block &Erase& and& Program )with &Respect &to &GND: 0.5&V&to&+13.5 V; (5)F-VCC&/&F-VCCQ&/&S-VCC& Supply& Voltage &with &Respect &to& GN:0.2V&to&+3.3 V; (6)Output &Short& Circuit &Curren:100mA.

The electrical characteristics(Ta=25) of the RD38F1010C0ZBL0 can be summarized as:(1)input low voltage:-0.2~0.6V; (2)input high voltage:2.3~Vcc+0.2V; (3)output low voltage:-0.10~0.10V; (4)output high voltage:Vcc-0.1V.If you want to know more information about RD38F1010C0ZBL0 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .