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RD45HMF1

Features: •High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz•High Efficiency: 50%typ.ApplicationFor output stage of high power amplifiers in 800-900MHz Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source ...

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SeekIC No. : 004475654 Detail

RD45HMF1: Features: •High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz•High Efficiency: 50%typ.ApplicationFor output stage of high power amplifiers in 800-900MHz Band mobile r...

RD45HMF1 Data Sheet

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Part Number:
RD45HMF1
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
•High Efficiency: 50%typ.




Application

For output stage of high power amplifiers in 800-900MHz Band mobile radio sets.




Specifications

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 30 V
VGSS Gate to source voltage Vgs=0V +/-20 V
Pch Channel dissipation Tc=25 125 W
Pin Input power Zg=Zl=50 25 W
ID Drain current - 15 A
Tch Channel temperature - 175
Tstg Storage temperature - -40 to +175
R th j-c Thermal resistance junction to case 1.2 /W

Note 1: Above parameters are guaranteed independently.




Description

RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications.




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