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RD60HUF1

Features: •High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz•High Efficiency: 55%typ.on UHF BandApplicationFor output stage of high power amplifiers in UHF Band mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to sou...

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RD60HUF1: Features: •High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz•High Efficiency: 55%typ.on UHF BandApplicationFor output stage of high power amplifiers in UHF Band mobi...

RD60HUF1 Data Sheet

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Part Number:
RD60HUF1
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
•High Efficiency: 55%typ.on UHF Band




Application

For output stage of high power amplifiers in UHF Band mobile radio sets.




Specifications

SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage 30 V
VGSS Gate to source voltage +/-20 V
Pch Channel dissipation Tc=25 150 W
Tj Junction Temperature 175
Tstg Storage temperature -40 to +175
R th-c Thermal resistance junction to case 1.0 /W

Note 1: Above parameters are guaranteed independently.




Description

RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.




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