Position: Home  > All Categories> Integrated Circuits (ICs) > RDN100N20

RDN100N20

MOSFET

product image

RDN100N20 Picture
See larger image
SeekIC No. : 00159517 Detail

RDN100N20: MOSFET

RDN100N20 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
RDN100N20
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.36 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FN Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.36 Ohms
Package / Case : TO-220FN


Features:

1) Low on-resistance.
2) Low input capacitance.
3) Exellent resistance to damage from static electricity.


Application

Switching


Specifications

Parameter Symbol Limits UNIT
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±30 V
Drain Current Continuous ID 10 A
Pulsed IDP  *1 40 A
Reverse Drain Current Continuous DR 10 A
Pulsed DRP  *1 40 A
Avalanche Current IAS   *2 10 A
Avalanche Energy EAS   *2 120 mJ
Total Power Dissipation (TC=25) PD 35 W
Channel Temperature Tch 150
Storage Temperature Tstg −55 to +150

*1 Pw 10s, Duty cycle 1%
*2 L 4.5mH, VDD=50V, RG=25, 1Pulse, Tch=25


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Transformers
TM-09210
BV222-1-00992
Tools
TCP202
G084SN05 V.3
Kits
IT243
UVSC-110-4E1
Audio Products
HUC1002
WM-64CT
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more