REF195GSZ

The REF195GSZ is one member of the REF19x series.The REF19x series precision band gap voltage references use a patented temperature drift curvature correction circuit and laser trimming of highly stable, thin-film resistors to achieve a very low temperature coefficient and high initial accuracy.The REF19x series is made up of micropower, low dropout voltage (LDV) devices, providing stable output voltage from supplies as low as 100 mV above the output voltage and consuming less than 45 A of supply current.

Features of the REF195GSZ are:(1)temperature coefficient: 5 ppm/°C maximum; (2)low supply current: 45A maximum; (3)sleep mode: 15A maximum; (4)low dropout voltage; (5)load regulation: 4 ppm/mA; (6)line regulation: 4 ppm/V; (7)high output current: 30 mA; (8)short-circuit protection; (9)initial accuracy: ±2 mV maximum.All electrical grades are available in an 8-lead SOIC_N package; the PDIP and TSSOP packages are available only in the lowest electrical grade. Products are also available in die form.

The absolute maximum ratings of the REF195GSZ can be summarized as:(1)supply voltage:0.3 V, +18 V;(2)output to GND:-0.3 V, VS + 0.3 V;(3)output to GND short-circuit duration:indefinite;(4)storage temperature range PDIP, SOIC_N package:-65 to +150;(5)operating temperature range REF19x:-40 to +85;(6)junction temperature range PDIP, SOIC_N package:-65°C to +150°C;(7)lead temperature range (soldering 60 sec):300.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.The REF19x family of references is capable of delivering load currents to 30 mA with an input voltage that ranges from 3.3 V to 5 V. When these devices are used in applications with large input voltages, exercise care to avoid exceeding the maximum internal power dissipation of these devices.