Features: • 3.5A, 30V• r DS(ON) = 0.060W• Temperature Compensating PSPICE® Model• On-Resistance vs Gate Drive Voltage Curves• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature - TB334 Guidelines for Soldering Surface Mount Compon...
RF1K49088: Features: • 3.5A, 30V• r DS(ON) = 0.060W• Temperature Compensating PSPICE® Model• On-Resistance vs Gate Drive Voltage Curves• Peak Current vs Pulse Width Curve̶...
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| Drain to Source Voltage (Note 1) | VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 30 | V |
| Gate to Source Voltage | VGS | ±10 | V |
| Drain Current Continuous (Pulse width = 5s) | ID | 3.5 | A |
| Pulsed (Figure 5) | IDM | Refer to Peak Current Curve | A |
| Pulse Avalanche Rating(Figure 6) | EAS | Refer to UIS Curve |
A |
| Power Dissipation TA = 25 | PD | 2 | W |
| Derate Above 25 | 0.016 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This Dual N-Channel power MOSFET RF1K49086 is manufactured using an advanced MegaFET process. RF1K49086 , which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49086 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.