RF1K49092

Packaging :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Drain-Source Breakdown Voltage : 12 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.05 Ohms
Package / Case : SOP-8
Continuous Drain Current : 3.5 A, - 2.5 A


Features:

• 3.5A, 12V (N-Channel)
2.5A, 12V (P-Channel)
• r _DS(ON) = 0.050W (N-Channel)
   r _DS(ON) = 0.130W (P-Channel)
• Temperature Compensating PSPICE^® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

		N-CHANNEL	P-CHANNEL	UNITS
Drain to Source Voltage (Note 1)	VDSS	12	-12	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	12	-12	V
Gate to Source Voltage	VGS	±10	±10	V
Drain Current Continuous (Pulse width = 5s)	ID	3.5	2.5	A
Pulsed (Figure 5,26)	IDM	Refer to Peak Current Curve	Refer to Peak Current Curve	A
Pulse Avalanche Rating(Figure 6,27)	EAS	Refer to UIS Curve	Refer to UIS Curve	A
Power Dissipation TA = 25	PD	2	2	W
Derate Above 25		0.016	0.016	W/
Operating and Storage Temperature	TJ , TSTG	-55 to 150	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

This complementary power MOSFET RF1K49092is manufactured using an advanced MegaFET process. RF1K49092, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49092 is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.