Position: Home > Datasheet list > RF1 Series > Index R > RF1VU7
Electronica China

Purchase RF1VU7, In-stock RF1VU7 From SeekIC.

 

RF1VU7 Product Image

RF1 Series Datasheet download

Five Points

Part Number: RF1VU7

 

 

 

 

Description: The RF1VU7 is a kind of integrated television demodulator assembly designed for use with

Urgent Purchase

RF1VU7 General Description


The RF1VU7 is a kind of integrated television demodulator assembly designed for use with VTSS-series tuners. The device replaces the earlier RIFU0508GEZZ and provides the same functionality in all respects. The input is a standard NTSC 45.75 MHz inverted television IF spectrum, as referenced to the video frequency. The outputs are demodulated vide (AM) and audio (FM), an AFT signal to indicate the need for tuning correction, and an AGC control line for feedback to the tuner. The device operates from a +9 V source.

There are some features as follows: (1)NTSC receiving standard; (2)receiving system: intercarrier sound; (3)intermediate frequency: picture: 45.75 MHz, sound: 41.25 MHz; (4)norminal input impedance: 75 unbalanced type; (5)terminal output voltage: RF AGC: 8.0 V (0 to 8.0 V); AFT: 4.5 V (1 to 8 V); (6)operating voltage: B voltage: 9 V±10%, AFT mute: ON=0.3 V max and OFF=Open; (7)consumed current: 65 mA max; (8)output terminal load condition: video: high-impedance load and audio: 56 k; (9)temperature: storage: -25 to 75, operating: -10 to 60.

The following is about the electrical characteristics: (1)differential gain: ±8% typ and ±12% max when stair step, 10 CH, 80% mod, 90 dB; (2)differential phase; ±6°typ and ±10° max when stair step, 10 CH, 80% mod, 90 dB; (3)picture output S/N ratio: 42 dB typ and 41 dB min when weight filter OFF, white level 50%, 90 dB; (4)AFT output voltage operation characteristics: 4.5 V typ and 1.0 to 8.0 V; (5)AFT operation characteristics local oscillator frequency error: ±25 kHz typ and ±50 kHz max ar AFT voltage 4.5 V; (6)picture frequency characteristics 100 kHz to 3 MHz: ±1.5 dB typ and -1±3 dB (max) when multi-burst, 100 kHz standard, 80% mod, 90 dB; (7)picture frequency characteristics 100 kHz to 3 MHz: -3.0 dB typ and -3±4 dB (max) when multi-burst, 100 kHz standard, 80% mod, 90 dB; (8)sound S/N ratio: 50 dB typ and 42 dB min when standard color bar, 85.5% mod, 400 Hz±25 kHz/Dev.

RF1VU7 datasheet

RF1
PDF/DataSheet Download

Find RF1VU7 Suppliers

  • ·RF1/3094BLACK
  •  
  • FUSS SCHRAUBBEFESTIGUNG DM15.9 Inhalt pro Packung: 100 Stk.  
  • 314315 KB
  • RF1/3094BLACK Datasheet Download
  • ·RF1/37.5MM
  •  
  • HARTGUMMIFUSS  
  • 65045 KB
  • RF1/37.5MM Datasheet Download
  • ·RF100
  • Willow Technologies Ltd 
  • Series, High Frequency Power Resistors Thick film,Non-Inductive 
  • 756593 KB
  • RF100 Datasheet Download
  • ·RF1001T2D
  • ROHM [Rohm] 
  • Fast recovery diodes 
  • 182239 KB
  • RF1001T2D Datasheet Download
  • ·RF1003T2D
  •  
  • Diodes  
  • 40034 KB
  • RF1003T2D Datasheet Download
  • ·RF100-902-928RF
  •  
  • Telecommunication IC  
  • 235323 KB
  • RF100-902-928RF Datasheet Download
  • ·RF101
  • ROHM [Rohm] 
  • Fast recovery Diodes (Silicon Epitaxial Planar) 
  • 49031 KB
  • RF101 Datasheet Download
  • ·RF101A2S
  • Rohm 
  • Fast recovery diode 
  • 164691 KB
  • RF101A2S Datasheet Download

Related Part Number

    RF1VU7 Relative Products

    • RF1S9640SM

      RF1S9640SM

      These are P-Channel enhancement mode silicon-gate power field-effect transistors. RF1S9640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche mode of operation. All of these power M...

    • RF1S9630SM

      RF1S9630SM

      These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9630SM vare advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these powe...

    • RF1S9540SM

      RF1S9540SM

      These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power...

    • RF1S9530SM

      RF1S9530SM

      These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9530SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power...

    • RF1S70N06SM

      RF1S70N06SM

      These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S70N06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in appli...

    • RF1S70N06

      RF1S70N06

      The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding per...

    Hotspot Suppliers Product

    • Models: NL6448BC33-46
Price: 10-25 USD

      NL6448BC33-46

      Price: 10-25 USD

      matrix color liquid crystal display, thin film transistor, –0.3 to 6.5 V, Low reflection

    • Models: SN755870
Price: 3-10 USD

      SN755870

      Price: 3-10 USD

      Integrated Circuit, QFP100, 11W, 5V--100V, SN755870, Texas Instruments

    • Models: LMG5278XUFC-00T
Price: 0.1-1 USD

      LMG5278XUFC-00T

      Price: 0.1-1 USD

      LMG5278XUFC-00T, hit 9.4", 640*480 STN LCD Panel

    • Models: TZMC3V0-GS
Price: 0.0001-5 USD

      TZMC3V0-GS

      Price: 0.0001-5 USD

      Small Signal Zener Diode, Very sharp reverse characteristic, Low reverse current level, LL-34, 500mW

    • Models: SIL9134CTU
Price: 5-5.5 USD

      SIL9134CTU

      Price: 5-5.5 USD

      QFP, ICs, SIL9134CTU

    • Models: MAX1792EUA18
Price: 1.68-1.8 USD

      MAX1792EUA18

      Price: 1.68-1.8 USD

      500mA Low-Dropout, Linear Regulator, uMAX, +2.5V to +5.5V supply, 1.3W, Guaranteed 500mA Output C...

    • Models: MJ11032
Price: 6-7 USD

      MJ11032

      Price: 6-7 USD

      50A,120V,300W, Silicon Power Transistor, TO-3 , NPN

    • Models: GS8160Z36T-150
Price: 12-13 USD

      GS8160Z36T-150

      Price: 12-13 USD

      18Mbit Synchronous Static SRAM, 2.5 V, 100-lead TQFP, ±20mA, 1.5 W, GS8160Z36T-150

    • Models: ISD1420P
Price: 2.8-4.5 USD

      ISD1420P

      Price: 2.8-4.5 USD

      play back device, DIP, -0.3V to +7.0V

    • Models: OPA227UA/2K5
Price: 0.98-1.11 USD

      OPA227UA/2K5

      Price: 0.98-1.11 USD

      High Precision, Low Noise Operational Amplifier, 8MHZ, 8SOIC, ±18V, 160dB

    • Models: PIC12F629-I/SN
Price: 0.38-0.4 USD

      PIC12F629-I/SN

      Price: 0.38-0.4 USD

      8 bit, 8SOIC, 8-Pin, Flash-Based, CMOS Microcontroller, 2 V ~ 5.5 V, 20MHz

    • Models: AT49BV162A-70TI
Price: 0.5-2 USD

      AT49BV162A-70TI

      Price: 0.5-2 USD

      Flash memory, TSSOP, -0.6V to +13.0V

    Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All