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MFG:RFMD  Package Cooled:SOP  

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Part Number: RF2103P

 

MFG: RFMD

Package Cooled: SOP

 

Description: The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium Ar...


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RF2103P General Description


The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUHF radio transmitters operating between 450MHz and1000MHz. It may also be used as a driver amplifier inhigher power applications. The device is self-containedwith the exception of the output matching network, powersupply feed line, and bypass capacitors, and it producesan output power level of 750mW (CW). The device canbe used in 3 cell battery applications. The maximum CWoutput at 3.6V is 175mW. The unit has a total gain of 1dB, depending upon the output matching network.

RF2103P Maximum Ratings

Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
VDC
Gain Control Voltage(VPD)
-0.5 to +5
V
DC Supply Current
350
mA
Input RF Power
+12
dBm
Output Load VSWR
10:1
 
Operating Case Temperature
-40 to +100
Operating Ambient Temperature
-40 to +85
Storage Temperature
-40 to +150

RF2103P Features

• 450MHz to 1000MHz Operation
• Up to 750mW CW Output Power
• 31dB Small Signal Gain
• Single 2.7V to 7.5V Supply
• 47% Efficiency
• Digitally Controlled Power Down Mode

RF2103P Typical Application

• Digital Communication Systems
• Spread-Spectrum Communication Systems
• Driver for Higher Power Linear Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment

RF2103P datasheet

RF2103P
PDF/DataSheet Download

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