Purchase RF2103P, In-stock RF2103P From SeekIC.
MFG:RFMD Package Cooled:SOP


Part Number: RF2103P
MFG: RFMD
Package Cooled: SOP
Description: The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium Ar...
MFG:RFMD Package Cooled:SOP


MFG: RFMD
Package Cooled: SOP
Description: The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium Ar...
The RF2103P is a medium power linear amplifier IC. Thedevice is manufactured on an advanced Gallium ArsenideHeterojunction Bipolar Transistor (HBT) process, and haseen designed for use as the final linear RF amplifier inUHF radio transmitters operating between 450MHz and1000MHz. It may also be used as a driver amplifier inhigher power applications. The device is self-containedwith the exception of the output matching network, powersupply feed line, and bypass capacitors, and it producesan output power level of 750mW (CW). The device canbe used in 3 cell battery applications. The maximum CWoutput at 3.6V is 175mW. The unit has a total gain of 1dB, depending upon the output matching network.
|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +7.5 |
VDC |
| Gain Control Voltage(VPD) |
-0.5 to +5 |
V |
| DC Supply Current |
350 |
mA |
| Input RF Power |
+12 |
dBm |
| Output Load VSWR |
10:1 |
|
| Operating Case Temperature |
-40 to +100 |
|
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
RF2103P
PDF/DataSheet Download








