Features: • DC to well over 2500MHz Operation• Internally Matched Input and Output• 15dB Small Signal Gain• 3.8dB Noise Figure• +20dBm Output Power• Single 5V to 12V Positive Power SupplyApplication• CATV Distribution Amplifiers• Cable Modems• ...
RF2312: Features: • DC to well over 2500MHz Operation• Internally Matched Input and Output• 15dB Small Signal Gain• 3.8dB Noise Figure• +20dBm Output Power• Single 5V to ...
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| Parameter |
Rating |
Unit |
| Device Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Maximum Junction Temperature |
125 +18 20:1 -40 to +85 -40 to +150 150 |
mA dBm °C °C °C |
| Frequency (MHz) | DC to 2500 |
| Gain (dB) | 16 |
| NF (dB) | 4.2 |
| OP1dB (dBm) | 18.5 |
| IP1dB (dBm) | 2.5 |
| OIP3 (dBm) | +30 |
| Gain Control Range (dB) | 4.2 |
| Vcc (V) | 9.0 |
| Icc (mA) | 100 |
| Package/Size (Dim in mm) | SOIC-8 |
The RF2312 is a general purpose, low cost high linearity RF amplifier IC. RF2312 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatness of better than 0.5dB from 5MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications of RF2312 include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz. RF2312 is self-contained with 75Ω input and output impedances, and requires only two external DC biasing elements to operate as specified.