RF3S49092SM

Features: • 20A, 12V (N-Channel) 10A, 12V (P-Channel)• rDS(ON) = 0.060 (N-Channel) rDS(ON) = 0.140 (P-Channel)• Temperature Compensating PSPICE® Model• On-Resistance vs Gate Drive Voltage Curves• Peak Current vs Pulse Width Curve• UIS Rating CurveSpecificati...

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SeekIC No. : 004476406 Detail

RF3S49092SM: Features: • 20A, 12V (N-Channel) 10A, 12V (P-Channel)• rDS(ON) = 0.060 (N-Channel) rDS(ON) = 0.140 (P-Channel)• Temperature Compensating PSPICE® Model• On-Resistance vs G...

floor Price/Ceiling Price

Part Number:
RF3S49092SM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 20A, 12V (N-Channel) 10A, 12V (P-Channel)
• rDS(ON) = 0.060 (N-Channel) rDS(ON) = 0.140 (P-Channel)
• Temperature Compensating PSPICE® Model
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve



Specifications

  Connection Diagram

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those  ndicated in the operational sections of this specification is not implied.

NOTE:1. TJ = 25oC to 150.



Description

These complementary power MOSFETs RF3S49092SM are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF3S49092SM is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product RF3S49092SM achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.




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