Features: • 4A, 60V• rDS(ON) = 0.600W• Design Optimized for 5 Volt Gate Drive• Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits• SOA is Power Dissipation Limited• 175oC Rated Junction Temperature• Logic Level Gate• High Input Impedance•...
RFD4N06LSM: Features: • 4A, 60V• rDS(ON) = 0.600W• Design Optimized for 5 Volt Gate Drive• Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits• SOA is Power Dissipation Limit...
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RFD4N06L RFD4N06LSM |
UNITS | |
|
Drain to Source Voltage (Note 1) VDSS |
60 |
V |
|
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
60 |
V |
|
Continuous (Figure 2)ID |
16 |
A |
|
Pulsed Drain Current (Note 3) IDM |
Refer to Peak Current Curve |
A |
|
Gate to Source Voltage VGS |
±10 |
V |
|
Pulsed Drain Current IDM |
4 |
W |
|
Power Dissipation |
10 | |
|
Derate above 25oC |
0.20 |
W/oC |
|
Pulsed Avalanche Rating UIS |
Refer to UIS SOA |
|
|
Operating and Storage Temperature .TJ, TSTG |
-55 to 75 |
o C |
|
Maximum Temperature for Soldering | ||
|
Leads at 0.063in (1.6mm) from Case for 10s TL |
300 |
o C |
|
Package Body for 10s, See Techbrief 334 Tpkg |
260 |
o C |