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RFD7N10LESM

Features: • 7A, 100V• rDS(ON) = 0.300Ω• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature- TB33...

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SeekIC No. : 004476518 Detail

RFD7N10LESM: Features: • 7A, 100V• rDS(ON) = 0.300Ω• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, TTL Circuits• Peak Current vs Pulse Wi...

RFD7N10LESM Data Sheet

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Part Number:
RFD7N10LESM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 7A, 100V
• rDS(ON) = 0.300Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFD7N10LE,
RFD7N10LESM		 UNITS
Drain to Source Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 100 V
Continuous Drain Current ID15 -8 A
Pulsed Drain Current (Note 3) IDM Refer to UIS Curve A
Gate to Source Voltage VGS +10, -8 V

Pulsed Drain Current IDM
Refer to Peak Current Curve		 W
Pulsed Avalanche Rating EAS Figures 6, 16, 17
Derate above 25oC 0.27 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

These N-Channel power MOSFETs RFD7N10LESM are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49046.




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