MFG:FAIRCHILD Package Cooled:TO-3P D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-3P
D/C: 05+
Description: The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which use...
The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. <BR><BR>These transistors can be operated directly from integrated circuits. Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.
Formerly developmental type TA09835.
| RFF60P06 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 125 | W |
| Derate Above 25oC | 1.0 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
RFF60P06
PDF/DataSheet Download
RFF500/600/700 series is a high efficiency, enclosed, isolated dc-dc converter series in an industry standard full-brick package that provides up to 700 W of output power. The RFF500/600/700 series delivers very high usable output power for today's high perf...
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