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RFL1P10

Features: • 1A, -80V and -100V• rDS(ON) = 3.65W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier DeviceSpecifications RFL1P08 RFL1P10 UNITS Drain to Source V...

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RFL1P10: Features: • 1A, -80V and -100V• rDS(ON) = 3.65W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impeda...

RFL1P10 Data Sheet

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Part Number:
RFL1P10
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1A, -80V and -100V
• rDS(ON) = 3.65W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device


Specifications

  RFL1P08 RFL1P10 UNITS
Drain to Source Voltage (Note 1) VDSS -80 -100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -80 -100 V
Continuous Drain Curren ID 1 1 A
Pulsed Drain Current (Note 3) IDM 5 5 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s.TL 3030 300 o C
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are P-Channel enhancement mode silicon gate power field effect transistors RFL1P10 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFL1P10 can be operated directly from integrated circuits.




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