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RFM6N45

Features: • 6A, 450V and 500V• rDS(ON) = 1.250W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedence• Majority Carrier Device• Related Literature- TB334 Guidelines for Soldering Surfac...

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RFM6N45: Features: • 6A, 450V and 500V• rDS(ON) = 1.250W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impede...

RFM6N45 Data Sheet

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Part Number:
RFM6N45
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 6A, 450V and 500V
• rDS(ON) = 1.250W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedence
• Majority Carrier Device
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFM6N45 RFM6N45 RFP6N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 450 500 V
RMS Continuous ID 6 6 6 A
Pulsed Drain Current (Note 3) IDM 15 15 15 V
Maximum Power Dissipation PD ±20 ±20 ±20 V
Maximum Power Dissipation PD 100 75 75 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 o C
Maximum Temperature for Soldering 0.8 0.6 0.6  
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300   o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260   o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM6N45 specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM6N45 can be operated directly from integrated circuits.




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