RFM8N18L

The RFM8N18L is n-channel enhancement-mode silicon-gate power field-effect transtors specifically designed for use with fogic level (5 volt) driving sources in a applications such as programmable controllers,sutomotive switching,and solenold drivers.

Features of the RFM8N18L are:(1)design optimized for 5 volt gate drive;(2)can be driven directly from Q-MOS,N-MOS,TTL circuits;(3)compatible with automotive drive requirements;(4)SOA is power-dissipation limited;(5)nanosecond switching speeds;(6)linear transfer characteristics;(7)high input impedance;(8)majority device.

The absolute maximum ratings of the RFM8N18L can be summarized as:(1):the parameter is drain-source voltage,the symbol is VDSS,the rating is 180,the unit is V;(2):the parameter is drain-gate voltage,the symbol is VDGR,the rating is 180,the unit is V;(3):the parameter is gate-source voltage,the symbol is VGS,the rating is ±10,the unit is V;(4):the parameter is drain current,RMS continuous,the symbol is ID,the rating is 8,the unit is A;(5):the parameter is drain current,pulsed,the symbol is IDM,the rating is 20,the unit is A;(6):the parameter is power dissipation @ Tc=25,the symbol is PD,the rating is 75,the unit is W;(7):the parameter is power dissipation derate above Tc=25,the symbol is PD,the rating is 0.6,the unit is W/;(8):the parameter is operating and storage temperature,the symbol is Tj,Tstg,the rating is -55 to +150,the unit is .