RFP30N06LE

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : - 8 V, + 10 V
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• 30A, 60V
• r _DS(ON) = 0.047W
• 2kV ESD Protected
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	60	V
Gate to Source Voltage	VGS	±10,8	V
Continuous Drain Current	ID	30	A
Pulsed Drain Current (Note 3)	IDM	Refer to Peak Current Curve
Single Pulse Avalanche Rating	EAS	Refer to UIS Curve
Power Dissipation	PD	96	W
Derate Above 25		0.645	W/
Electrostatic Discharge Rating, MIL-STD-883, Category B(2).	ESD	2	kV
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel power MOSFETs RFP30N06LE manufactured using the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications  such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RFP30N06LE can be operated directly from integrated circuits.

These transistors RFP30N06LE incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Parameters:

Technical/Catalog Information	RFP30N06LE
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	47 mOhm @ 30A, 5V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	96W
Packaging	Tube
Gate Charge (Qg) @ Vgs	62nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP30N06LE RFP30N06LE