Features: • 45A, 20V• rDS(ON) = 0.022• Temperature Compensating PSPICE Model• Can be Driven Directly from CMOS, NMOS, and TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating TemperatureSpecifications Drain to Source Voltage ...
RFP45N02: Features: • 45A, 20V• rDS(ON) = 0.022• Temperature Compensating PSPICE Model• Can be Driven Directly from CMOS, NMOS, and TTL Circuits• Peak Current vs Pulse Width Curv...
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Drain to Source Voltage .........................VDSS
Drain to Gate Voltage ......................... VDGR
Gate to Source Voltage ......................... VGS
Drain Current
Continuous ................................ ID
Pulsed Drain Current .......................... IDM
Pulsed Avalanche Rating .........................EAS
Power Dissipation .............................PD
Derate Above 25oC. ........................
Operating and Storage Temperature.................TJ, TSTG
Soldering Temperature of Leads for 10s..................TL
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFP45N02L, RF1S45N02L, and RF1S45N02LSM were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RFP45N02L, RF1S45N02L, and RF1S45N02LSM can be operated directly from integrated circuits.