RFP45N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.028 Ohms
Continuous Drain Current : 45 A


Features:

• 45A, 60V
• r_DS(ON) = 0.028W
• Temperature Compensating PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	60	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	60	V
Continuous Drain Current	ID	45	A
Pulsed Drain Current (Note 3)	IDM	Refer to Peak Current Curve
Gate to Source Voltage	VGS	±20	V
Pulse Avalanche Rating	EAS	Refer to UIS Curve
Power Dissipation	PD	131	W
Linear Derating Factor		0.877	W/
Operating and Storage Temperature	TJ , TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

RFP45N06 are N-Channel enhancement mode silicon gate power field effect transistors. RFP45N06 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFP45N06 can be operated directly from integrated circuits.

Formerly developmental type TA49028.

Parameters:

Technical/Catalog Information	RFP45N06
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	28 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 25V
Power - Max	131W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFP45N06 RFP45N06