RFP45N06LE

Features: • 45A, 60V• r DS(ON) = 0.028• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards...

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SeekIC No. : 004476638 Detail

RFP45N06LE: Features: • 45A, 60V• r DS(ON) = 0.028• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175oC Operating Temperatu...

floor Price/Ceiling Price

Part Number:
RFP45N06LE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

• 45A, 60V
• r DS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 60 V
Gate to Source Voltage VGS ±10 V
Continuous Drain Current ID 45 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Pulse Avalanche Rating EAS Refer to UIS Curve A
Power Dissipation PD 142 W
Derate Above 25   0.95 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334
T L
Tpkg
300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

RFP45N06LE are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type RFP45N06LE.




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