Features: • 4A, 50V and 60V• rDS(ON) = 0.800W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS, TTL Circuits• Compatible with Automotive Drive Requirements• SOA is Power-Dissipation Limited• Nanosecond Switching Speeds• Li...
RFP4N05L: Features: • 4A, 50V and 60V• rDS(ON) = 0.800W• Design Optimized for 5V Gate Drives• Can be Driven Directly from QMOS, NMOS, TTL Circuits• Compatible with Automotive Dri...
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| RFP4N05L | RFP4N06L | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 60 | V |
| Continuous Drain Current ID | 4 | 4 | A |
| Pulsed Drain Current (Note 3) IDM | 10 | 10 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 25 | 25 | W |
| Linear Derating Factor | 0.2 | 0.2 | W/o Caaa |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Maximum Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | o C |