Packaging
:
Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Package / Case
: TO-220AB
Continuous Drain Current
: 4.3 A
Drain-Source Breakdown Voltage
: 1000 V
Resistance Drain-Source RDS (on)
: 3.5 Ohms
Features: • 4.3A, 1000V
• r DS(ON) = 3.500W
• UIS Rating Curve (Single Pulse)
• -55to 150 Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"Specifications
| |
|
|
UNITS |
| Drain to Source Breakdown Voltage (Note 1) |
VDS |
1000 |
V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . |
VDGR |
1000 |
V |
| Continuous Drain Current |
ID |
4.6 |
V |
| Pulsed Drain Current (Note 3) |
IDM |
17 |
A |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Single Pulse Avalanche Rating |
EAS |
Refer to UIS Curve |
mj |
| |
|
(Figures 4, 14, 15) |
|
| Maximum Power Dissipation |
PD |
150 |
W |
| Linear Derating Factor |
|
1.2 |
W/ |
| Operating and Storage Temperature |
TJ, TSTG |
-55 to 150 |
|
| Soldering Temperature of Leads for 10s |
T L
Tpkg |
300
260 |
|
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DescriptionThe RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.
Formerly developmental type TA09850.
Parameters: | Technical/Catalog Information | RFP4N100 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25° C | 4.3A |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 20V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFP4N100
RFP4N100
|
RFP4N100 Data Sheet
