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RFS1006

Features: ·31 dBm P1dB·21 dB gainApplication·3.4-3.6 GHz fixed-wireless transmitter·Wireless Local Loop transmitterPinoutSpecifications Parameter Rating Unit DC Power Supply 6.0 V DC Gate Voltage -5.0 min, -0.5 max V DC ...

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SeekIC No. : 004476666 Detail

RFS1006: Features: ·31 dBm P1dB·21 dB gainApplication·3.4-3.6 GHz fixed-wireless transmitter·Wireless Local Loop transmitterPinoutSpecifications Parameter Rating Unit DC Power...

RFS1006 Data Sheet

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Part Number:
RFS1006
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·31 dBm P1dB
·21 dB gain


Application

·3.4-3.6 GHz fixed-wireless transmitter
·Wireless Local Loop transmitter


Pinout

Connection Diagram


Specifications

Parameter
Rating
Unit
DC Power Supply
6.0
V
DC Gate Voltage
-5.0 min, -0.5 max
V
DC Supply Current
1000
mA
Maximum RF input level
+14
dBm
Operating Ambient Temperature
-40 to +85
Storage Temperature
-55 to +150



Description

The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless applications requiring high transmit linearity. The input and output of the PA can be easily matched for optimum linearity and power performance from 3.4 to 3.6 GHz.




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