RHRD660

Rectifiers 6A 600V

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RHRD660 Picture
SeekIC No. : 00183077 Detail

RHRD660: Rectifiers 6A 600V

floor Price/Ceiling Price

Part Number:
RHRD660
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Quick Details

Product : Ultra Fast Recovery Rectifiers Configuration : Single
Reverse Voltage : 600 V Forward Voltage Drop : 2.1 V
Recovery Time : 35 ns Forward Continuous Current : 6 A
Max Surge Current : 60 A Reverse Current IR : 100 ua
Mounting Style : Through Hole Package / Case : TO-251    

Description

Packaging :
Product : Ultra Fast Recovery Rectifiers
Reverse Voltage : 600 V
Configuration : Single
Mounting Style : Through Hole
Max Surge Current : 60 A
Reverse Current IR : 100 ua
Forward Voltage Drop : 2.1 V
Forward Continuous Current : 6 A
Recovery Time : 35 ns
Package / Case : TO-251


Features:

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction



Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose



Specifications

 
RHRD660,RHRD660S
UNITS
Peak Repetitive Reverse Voltage
VRRM
600
V
Working Peak Reverse Voltage
VRWM
600
V
DC Blocking Voltage
VR
600
V
Average Rectified Forward Current
(TC = 152)
IF(AV)
6
A

Repetitive Peak Surge Current
(Square Wave, 20kHz)

IFRM
12
A

Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)

IFSM
60
A
Maximum Power Dissipation
PD
50
W
Avalanche Energy (See Figures 10 and 11)
EAVL
10
mJ
Operating and Storage Temperature
TSTG,TJ
-65to175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, see Tech Brief 334
TPKG
260



Description

The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices RHRD660 are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly developmental type RHRD660.




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