Features: • Hyperfast with Soft Recovery<90ns• Operating Temperature+175• Reverse Voltage Up To1000V• Avalanche Energy Rated• Planar ConstructionApplication• Switching Power Supplies• Power Switching Circuits• General PurposeSpecifications ...
RHRU15090: Features: • Hyperfast with Soft Recovery<90ns• Operating Temperature+175• Reverse Voltage Up To1000V• Avalanche Energy Rated• Planar ConstructionApplication• S...
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| RHRU15090 |
RHRU150100 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
900 |
1000 |
V |
| Working Peak Reverse Voltage |
VRWM |
900 |
1000 |
V |
| DC Blocking Voltage |
VR |
900 |
1000 |
V |
| Average Rectified Forward Current (TC = +42) |
IF(AV) |
150 |
150 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
300 |
300 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
1500 |
1500 |
A |
| Maximum Power Dissipation |
PD |
375 |
375 |
W |
|
Avalanche Energy(L = 40mH) |
EAVL |
50 |
50 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to175 |
|
RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices RHRU15090 are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.