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RHRU50120

Features: • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns• Operating Temperature . . . . . . . . . . . . . . . . . . . +175• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V• Avalanche Energy Rated• Planar ConstructionA...

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SeekIC No. : 004477232 Detail

RHRU50120: Features: • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns• Operating Temperature . . . . . . . . . . . . . . . . . . . +175• Reverse Voltage . . . . . . . . ...

RHRU50120 Data Sheet

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Part Number:
RHRU50120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction


Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose


Specifications

 
RHRU50120
UNITS
Peak Repetitive Reverse Voltage
VRRM
1200
V
Working Peak Reverse Voltage
VRWM
1200
V
DC Blocking Voltage
VR
1200
V
Average Rectified Forward Current
(TC = 50)
IF(AV)
50
A
Repetitive Peak Surge Current
(Square Wave, 20kHz)
IFSM
100
A
Nonrepetitive Peak Surge Current
(Halfwave, 1Phase, 60Hz)
IFSM
500
A
Maximum Power Dissipation
PD
150
W
Avalanche Energy
(See Figures 10 and 11).
EAVL
50
mJ
Operating and Storage Temperature
TSTG,TJ
-65to+175



Description

The RHRU50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices RHRU50120 are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.




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