Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DCConverters up to 75A Output· Low Conduction Losses Low Switching Losses· Low Vf Schottky Rectifier· Refer to IRHSNA57064 for Lower RDS(on)Specifications Parameter Units ID @ VGS ...
RHSLNA57064: Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DCConverters up to 75A Output· Low Conduction Losses Low Switching Losses· Low Vf Schottky Re...
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| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain or Source Current | 75* | A |
| ID @ VGS = 12V, TC = 10 | Continuous Drain or Source Current | 75* | |
| IDM | Pulsed Drain Current ➀ | 300 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 370 | mJ |
| IAR | Avalanche Current ➀ | 75 | A |
| EAR | Repetitive Avalanche Energy ➀ | 25 | mJ |
| IF (AV)@ TC = 25 | Schottky and Body Diode Avg. Forward Current ➂ | 75* | A |
| IF (AV)@ TC = 100 | Schottky and Body Diode Avg. Forward Current ➂ | 75* | |
| TJ, TSTG | Opeating and Storage Temperature Range | -55 to 150 | |
| Package Mounting Surface Temperature | 300 ( for 5 s) | ||
| Weight | 3.3 (Typical ) | g |
The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.