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RJK03C0DPA-00#J53

MOSFET N-CH 30V 70A W-PAK

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SeekIC No. : 003432062 Detail

RJK03C0DPA-00#J53: MOSFET N-CH 30V 70A W-PAK

RJK03C0DPA-00#J53 Data Sheet

floor Price/Ceiling Price

US $ .58~1.26 / Piece | Get Latest Price
Part Number:
RJK03C0DPA-00#J53
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $1.26
  • $1.08
  • $.97
  • $.88
  • $.79
  • $.68
  • $.58
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 70A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2 mOhm @ 35A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 66nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 11000pF @ 10V
Power - Max: 65W Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 65W
Current - Continuous Drain (Id) @ 25° C: 70A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Gate Charge (Qg) @ Vgs: 66nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds: 11000pF @ 10V


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