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RJK1555DPA-00#J0

MOSFET N-CH 150V W-PAK

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SeekIC No. : 003432375 Detail

RJK1555DPA-00#J0: MOSFET N-CH 150V W-PAK

RJK1555DPA-00#J0 Data Sheet

floor Price/Ceiling Price

US $ .53~1.16 / Piece | Get Latest Price
Part Number:
RJK1555DPA-00#J0
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~10
  • 10~25
  • 25~100
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  • 250~500
  • 500~1000
  • Unit Price
  • $1.16
  • $.99
  • $.89
  • $.81
  • $.73
  • $.63
  • $.53
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 150V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 38nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Drain to Source Voltage (Vdss): 150V
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 25A
Power - Max: 30W
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Manufacturer: Renesas Electronics America
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPAK
Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V


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