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RJK2009DPM

Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A B...

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SeekIC No. : 004477319 Detail

RJK2009DPM: Features: • Low on-resistance• Low leakage current• High speed switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source v...

RJK2009DPM Data Sheet

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Part Number:
RJK2009DPM
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

• Low on-resistance
• Low leakage current
• High speed switching


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±30 V
Drain current ID 40 A
Drain peak current ID(pulse) Note1 160 A
Body-drain diode reverse drain current IDR 40 A
Body-drain diode reverse drain peak current IDR(pulse) Note1 160 A
Avalanche current IAP Note3 40 A
Avalanche energy EAR Note3 106 mJ
Channel dissipation Pch Note2 60 W
Channel to case thermal impedance ch-c 2.08 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tc = 25°C
            3. STch = 25°C, Tch 150°C


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