RJU002N06T106

MOSFET N-CH 60V 200MA SOT-323

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RJU002N06T106: MOSFET N-CH 60V 200MA SOT-323

floor Price/Ceiling Price

US $ .07~.27 / Piece | Get Latest Price
Part Number:
RJU002N06T106
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.27
  • $.18
  • $.13
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 200 mA
Resistance Drain-Source RDS (on) : 2.2 Ohms Configuration : Single
Mounting Style : SMD/SMT Package / Case : UMT-3
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 12 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 200 mA
Resistance Drain-Source RDS (on) : 2.2 Ohms
Package / Case : UMT-3


Parameters:

Technical/Catalog InformationRJU002N06T106
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs2.3 Ohm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds 18pF @ 10V
Power - Max200mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSC-70-3, SOT-323-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RJU002N06T106
RJU002N06T106
RJU002N06T106CT ND
RJU002N06T106CTND
RJU002N06T106CT



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