Features: 1) Low Qg.2) Low on-resistance.3) Exellent resistance to damage from static electricitySpecifications Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V gate-source voltage VGSS ±20 V Drain current Continuous ID 10 A Pul...
RK4410: Features: 1) Low Qg.2) Low on-resistance.3) Exellent resistance to damage from static electricitySpecifications Parameter Symbol Limits Unit Drain-source voltage VDSS 30 ...
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Parameter |
Symbol |
Limits |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
gate-source voltage |
VGSS |
±20 |
V | |
Drain current | Continuous |
ID |
10 |
A |
Pulsed |
IDP* |
40 |
A | |
Reverse drain current | Continuous |
IDR |
10 |
A |
Pulsed |
IDRP* |
40 |
A | |
Source Current (Body Diode) | Continuous |
IS |
1.3 |
A |
Pulsed |
ISP* |
5.2 |
A | |
Total power dissipation(TC=25) |
PD |
2 |
W | |
Channel temperature |
Tch |
150 |
||
Storage temperarure |
Tstg |
-55to+150 |