RM35HG-34S

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Capacitance @ Vr, F: -
Reverse Recovery Time (trr): 300ns
Supplier Device Package: -
Packaging: Bulk
Current - Average Rectified (Io): 35A
Voltage - DC Reverse (Vr) (Max): 1700V (1.7kV)
Current - Reverse Leakage @ Vr: 100µA @ 1700V
Manufacturer: Powerex Inc
Package / Case: TO-264-3, TO-264AA
Voltage - Forward (Vf) (Max) @ If: 5V @ 100A


Features:

·Non-Isolated Package
· Planar Chips
· t_rr = 300ns Max.


Application

·Snubber Circuits


Specifications

Ratings	Symbol	RM35HG-34S	Units
Peak Reverse Blocking Voltage (Non-Repetitive)	VRRM	1700	Volts
DC Reverse Blocking Voltage	VR(DC)	1360	Volts
DC Current, TC = 80 (Resistive Load)	IF(DC)	35	Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz)	IFSM	400	Amperes
I2t for Fusing, (8.3 milliseconds)	I2t	-	A2sec
Storage Temperature	Tstg	-40 to +125
Operating Temperature	Tj	-40 to +150
Maximum Mounting Torque M3 Mounting Screw	-	0.59 ~ 0.98	N ` m
Module Weight (Typical)	-	10	Grams

Description

Mitsubishi Super Fast Recovery Diodes RM35HG-34S are designed for use in applications requiring fast switching.

Parameters:

Technical/Catalog Information	RM35HG-34S
Vendor	Powerex Inc
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1700V (1.7kV)
Current - Average Rectified (Io)	35A
Voltage - Forward (Vf) (Max) @ If	5V @ 100A
Reverse Recovery Time (trr)	300ns
Current - Reverse Leakage @ Vr	100A @ 1700V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole
Package / Case	*
Packaging	Bulk
Capacitance @ Vr, F	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	RM35HG 34S RM35HG34S