RM50HG-12S

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Reverse Recovery Time (trr): 200ns
Supplier Device Package: -
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100µA @ 600V
Current - Average Rectified (Io): 50A
Manufacturer: Powerex Inc
Package / Case: TO-264-3, TO-264AA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200A


Features:

· Non-Isolated Package
· Planar Chips
· t_rr = 200 ns Max.




Application

·Snubber Circuits
· Switching Power Supplies
· Free Wheeling




Specifications

Characteristics	Symbol	Conditions	RM50HG-12S	Units
Peak Reverse Blocking Voltage	VDRM	-	600	Volts
Peak Reverse Blocking Voltage (Non-Repetitive)	VRRM	-	720	Volts
DC Reverse Blocking Voltage	VR(DC)	-	480	Volts
DC Current, TC = 80 (Resistive Load)	IF(DC)	-	50	Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz)	IFSM	-	1000	Amperes
I2t (for Fusing), 8.3 milliseconds	I2t	-	-	A2sec
Storage Temperature	TSTG	-	-40 to 125
Operating Temperature	Tj	-	-40 to 150
Maximum Mounting Torque M3 Mounting Screw	-	-	10	kg.-cm.
Weight (Typical)	-	-	10	Grams

Description

Powerex Super Fast Recovery Diodes RM50HG-12S are designed for use in applications requiring fast switching.

Parameters:

Technical/Catalog Information	RM50HG-12S
Vendor	Powerex Inc
Category	Discrete Semiconductor Products
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	50A
Voltage - Forward (Vf) (Max) @ If	4V @ 200A
Reverse Recovery Time (trr)	200ns
Current - Reverse Leakage @ Vr	100A @ 600V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Through Hole
Package / Case	*
Packaging	Bulk
Capacitance @ Vr, F	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RM50HG 12S RM50HG12S