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RMPA1951-102

Features: · Advanced DC power-management extends average phone-battery life!· Single positive-supply operation and power-down mode.· 35% power-added efficiency at +29 dBm CDMA average output power.· Compact LCC package: 6.0 x 6.0 x 1.5 mm3.· 50 ohm matched and DC blocked input/output.Specification...

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RMPA1951-102: Features: · Advanced DC power-management extends average phone-battery life!· Single positive-supply operation and power-down mode.· 35% power-added efficiency at +29 dBm CDMA average output power.·...

RMPA1951-102 Data Sheet

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Part Number:
RMPA1951-102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Advanced DC power-management extends average phone-battery life!
· Single positive-supply operation and power-down mode.
· 35% power-added efficiency at +29 dBm CDMA average output power.
· Compact LCC package: 6.0 x 6.0 x 1.5 mm3.
· 50 ohm matched and DC blocked input/output.


Specifications

Parameter Symbol Min Typical Max Units
Supply Voltage Vcc   3.5 6 V
Reference Voltage Vref 1.5 2.7 4.0 V
RF Input Power2 Pin   +1 +7 dBm
Load VSWR VSWR   1.2:1 10:1  
Case Operating Temperature Tc -40 +25 +110
Storage Temperature Tstg -55 +25 +150



Description

The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process.




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