MFG:RAYTHEON Package Cooled:LCC D/C:07+
MFG: RAYTHEON
Package Cooled: LCC
D/C: 07+
Description: The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication Syst...
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process.
| Parameter | Symbol | Min | Typical | Max | Units |
| Supply Voltage | Vcc | 3.5 | 6 | V | |
| Reference Voltage | Vref | 1.5 | 2.7 | 4.0 | V |
| RF Input Power2 | Pin | +1 | +7 | dBm | |
| Load VSWR | VSWR | 1.2:1 | 10:1 | ||
| Case Operating Temperature | Tc | -40 | +25 | +110 | |
| Storage Temperature | Tstg | -55 | +25 | +150 |
RMPA1951-102
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