Features: ` 38% CDMA/WCDMA efficiency at +28 dBm Pout` 14% CDMA/WCDMA efficiency (85 mA total current) at +16 dBm Pout` Meets HSDPA performance requirements` Linear operation in low-power mode up to +19 dBm` Low quiescent current (Iccq): 25 mA in low-power mode` Single positive-supply operation wi...
RMPA1963: Features: ` 38% CDMA/WCDMA efficiency at +28 dBm Pout` 14% CDMA/WCDMA efficiency (85 mA total current) at +16 dBm Pout` Meets HSDPA performance requirements` Linear operation in low-power mode up to...
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Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at p...
Features: • Single positive-supply operation• High dual-mode (AMPS/CDMA) efficiency...
| Symbol | Parameter | Value | Units |
| VCC1, VCC2 | Supply Voltages | 5.0 | V |
| Vref |
Reference Voltage | 2.6 to 3.5 | V |
| Vmode | Power Control Voltage | 3.5 | V |
| Pin | RF Input Power | +10 | dBm |
| Tstg | Storage Temperature | -55 to +150 |
The RMPA1963 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting US-PCS CDMA/WCDMA/HSDPA and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates.
A simple two-state Vmode control RMPA1963 is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.