RMPA1965

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Package / Case :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 85 C
Packaging : Reel
Type : Power Amplifier
Operating Frequency : 1910 MHz


Features:

` Single positive-supply operation with low power and shutdown modes
` 40% CDMA/WCDMA efficiency at +28 dBm average output power
` Compact lead-free compliant low-profile package (3.0 x 3.0 x 1.0 mm nominal)
` Internally matched to 50 and DC blocked RF input/output
` Meets CDMA2000-1XRTT/WCDMA performance requirements
` Meets HSDPA performance requirement


Specifications

Symbol	Parameter	Value	Units
VCC1, VCC2	Supply Voltages	5.0	V
Vref	Reference Voltage	2.6 to 3.5	V
Vmode	Power Control Voltage	3.5	V
Pin	RF Input Power	+10	dBm
TSTG	Storage Temperature	-55 to +150

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.


Description

The RMPA1965 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage.

High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

Parameters:

Technical/Catalog Information	RMPA1965
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	8-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	45mA
Gain	26dB
Frequency	1.85GHz ~ 1.91GHz
RF Type	CDMA, CDMA2000, W-CDMA, PCS, HSPDA
Packaging	Cut Tape (CT)
Noise Figure	4dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA1965 RMPA1965 RMPA1965CT ND RMPA1965CTND RMPA1965CT